Опис документа

Accumulation Gate Capacitance of MOS Devices With Ultrathin High- Gate Dielectrics: Modeling and Characterization [Електронний ресурс] [Текст] / A.E. Islam, A. Haque // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1364-1372.
Analysis of Dielectric Rods With Arbitrary Shape for Low-Dispersion Slow-Wave Structures in Helix TWTs [Електронний ресурс] [Текст] / C. Paoloni // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1490-1493.
Analytical I–V Relationship Incorporating Field-Dependent Mobility for a Symmetrical DG MOSFET With an Undoped Body [Електронний ресурс] [Текст] / T. Vanhoucke, G.A.M. Hurkx // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1389-1397.
Analytical Model of Drain Current of Si/SiGe Heterostructure p-Channel MOSFETs for Circuit Simulation [Електронний ресурс] [Текст] / B. Bindu, N. DasGupta, A. DasGupta // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1411-1419.
A New Analytical Model for the Thermal Resistance of Deep-Trench Bipolar Transistors [Електронний ресурс] [Текст] / T. Vanhoucke, G.A.M. Hurkx // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1379-1388.
A Novel Voltage-Mode CMOS Quaternary Logic Design [Електронний ресурс] [Текст] / Silva da, H. Boudinov, L. Carro // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1480-1483.
Assessment of Capture Cross Sections and Effective Density of Electron Traps Generated in Silicon Dioxides [Електронний ресурс] [Текст] / M.H. Chang, J.F. Zhang, W.D. Zhang // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1347-1354.
Call for Nominations—2006 J. J. Ebers Award [Електронний ресурс] [Текст] // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1499.
Call for Papers—2007 IEEE International Conference on Microelectronic Test Structures [Електронний ресурс] [Текст] // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1500.
Call for Papers—Special Issue of the IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY on Automotive Electronic Device Reliability [Електронний ресурс] [Текст] // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1496.
Call for Papers—Special Issue of the IEEE TRANSACTIONS ON ELECTRON DEVICES on Simulation and Modeling of Nanoelectronics Devices [Електронний ресурс] [Текст] // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1497-1498.
Call for Papers—Special Issue of the IEEE Transactions on Electron Devices on Spintronics [Електронний ресурс] [Текст] // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1494-1495.
Characteristics and Physical Mechanisms of Positive Bias and Temperature Stress-Induced Drain Current Degradation in HfSiON nMOSFETs [Електронний ресурс] [Текст] / C.T. Chan, C.J. Tang, T. Wang та ін. // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1340-1346.
Determination of Tunnel Mass and Physical Thickness of Gate Oxide Including poly-Si/SiO2 and Si/SiO2 Interfacial Transition Layers [Електронний ресурс] [Текст] / H. Watanabe, D. Matsushita, K. Muraoka // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1323-1330.
Electrical Domains and Submillimeter Signal Generation in AlGaN/GaN Superlattices [Електронний ресурс] [Текст] / GordionI., A. Manasson, V.I. Litvinov // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1294-1299.
Enhancement-Mode AlGaN/GaN HEMTs on Silicon Substrate [Електронний ресурс] [Текст] / S. Jia, Y. Cai, D. Wang та ін. // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1474-1477.
Field-Plated 0.25-mkm Gate-Length AlGaN/GaN HEMTs With Varying Field-Plate Length [Електронний ресурс] [Текст] / V. Kumar, G. Chen, S. Guo, I. Adesida // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1477-1480.
Gate Capacitances Behavior of Nanometer FD SOI CMOS Devices With HfO2 High-k Gate Dielectric Considering Vertical and Fringing Displacement Effects Using 2-D Simulation [Електронний ресурс] [Текст] / Y.S. Lin, C.H. Lin, J.B. Kuo, K.W. Su // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1373-1378.
IEEE Electron Devices Society [Електронний ресурс] [Текст] // IEEE Transactions on Electron Devices . — USA, 2006. — 4.
Impact of Interfacial Layer on Low-Frequency Noise of HfSiON Dielectric MOSFETs [Електронний ресурс] [Текст] / B.et Min // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1459-1466.
Improved and Physics-Based Model for Symmetrical Spiral Inductors [Електронний ресурс] [Текст] / Ji Chen, Juin Liou // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1300-1309.
Indium–Tin–Oxide-Free Organic Light-Emitting Device [Електронний ресурс] [Текст] / L. Ke, P. Chen, R.S. Kumar та ін. // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1483-1486.
Information for authors [Електронний ресурс] [Текст] // IEEE Communicatins : a publication of the IEEE Communications society. — USA, 2006. — 5.
Local Clustering 3-D Stacked CMOS Technology for Interconnect Loading Reduction [Електронний ресурс] [Текст] / X. Lin, S. Zhang, X. Wu, M. Chan // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1405-1410.
Metrics for Performance Benchmarking of Nanoscale Si and Carbon Nanotube FETs Including Device Nonidealities [Електронний ресурс] [Текст] / J. Deng, H.S.P. Wong // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1317-1322.
Negative-Bias Temperature Instability Cure by Process Optimization [Електронний ресурс] [Текст] / A.et Scarpa // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1331-1339.
Ni Fully GermanoSilicide for Gate Electrode Application in pMOSFETs With HfSiON Gate Dielectrics [Електронний ресурс] [Текст] / H.Y.et Yu // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1398-1404.
Novel Dual-Metal Gate Technology Using Mo-MoSix Combination [Електронний ресурс] [Текст] / T.L.et Li // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1420-1426.
One-Third-of-Pitch Reduction Technique for the Analysis of Ternary Azimuthally Periodic Helical Slow-Wave Structures [Електронний ресурс] [Текст] / M. Aloisio, G. Sorbello // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1467-1473.
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations [Електронний ресурс] [Текст] / P. Palestri, N. Barin, D. Esseni, C. Fiegna // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1443-1451.
RF Power Characteristics of SiGe HBTs at Cryogenic Temperatures [Електронний ресурс] [Текст] / M.W. Hsieh, Y.M. Hsin, K.H. Liang та ін. // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1452-1458.
SOI Technology for Radio-Frequency Integrated-Circuit Applications [Електронний ресурс] [Текст] / R. Yang, H. Qian, J. Li та ін. // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1310-1316.
Stability of Self-Consistent Monte Carlo Simulations: Effects of the Grid Size and of the Coupling Scheme [Електронний ресурс] [Текст] / P. Palestri, N. Barin, D. Esseni, C. Fiegna // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1433-1442.
Stress-Related Hydrogen Degradation of 0.1-mkm InP HEMTs and GaAs PHEMTs [Електронний ресурс] [Текст] / R.R. Blanchard, Alamo del // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1289-1293.
Supply and Threshold-Voltage Trends for Scaled Logic and SRAM MOSFETs [Електронний ресурс] [Текст] / E. Morifuji, T. Yoshida, M. Kanda та ін. // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1427-1432.
Three-Dimensional Modeling and Simulation of p-n Junction Spherical Silicon Solar Cells [Електронний ресурс] [Текст] / M. Gharghi, H. Bai, G. Stevens, S. Sivoththaman // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1355-1363.
Transient Substrate Currents in Junction-Isolated Lateral IGBT [Електронний ресурс] [Текст] / S. Hardikar, D.W. Green, E.M.S. Narayanan // IEEE Transactions on Electron Devices . — USA, 2006. — 6. — Pp. 1487-1490.