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Автор: Krishnamohan Tejas, Krivokapic Zoran, Uchida Ken, Nishi Yoshio, Saraswat Krishna
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Ключові слова:
гетероструктури, гетероструктуры ; Metal-Oxide-Semiconductor Field Effect Transistor, MOSFET
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Анотація:
For the first time, the tradeoffs between higher mobility (smaller bandgap) channel and lower band-to-band tunneling (BTBT) leakage have been investigated. In particular, through detailed experiments and simulations, the transport and leakage in ultrathin (UT) strained germanium (Ge) MOSFETs on bulk and silicon-on-insulator (SOI) have been examined.
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