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Ключові слова:
комплементарна логіка на транзисторах метал-окид-напівпровідник, КМОН, комплементарная логика на транзисторах металл-оксид-полупроводник,КМОП, CMOS-technology ; ексимерні лазери, эксимерные лазеры ; Complementary Metal-Oxide Semiconductor, CMOS ; CMOS
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Анотація:
In this paper, the potential for sub-10-nm junction formation of partial-melt laser annealing (PMLA), which is a combination of solid-phase regrowth and heat-assisted laser annealing (HALA), is demonstrated. HALA and PMLA are effective for reducing laser-energy density for dopant activation and for improving heating uniformity of device structure. The absence of melting at the dopant profile tail for PMLA results in a negligibly small diffusion at this region. A high activation rate is achievable by melting the upper part of the amorphous-silicon layer. The obtained sheet resistance of 10-nm-deep junctions was about 700 Щ/sq. for both n+/p and p+/n junctions. These results imply that PMLA is applicable for much shallower junction formation.
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