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Автор: Gili Enrico, Kunz V.Dominik, Uchino Takashi, Al Hakim, de Groot, Ashburn Peter, Hall Stephen
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Ключові слова:
Metal-Oxide-Semiconductor Field Effect Transistor, MOSFET
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Анотація:
Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations. This paper investigates the effect of the asymmetric source and drain geometries of surround-gate vertical MOSFETs on the drain leakage currents in the OFF-state region of operation. Measurements of gate-induced drain leakage (GIDL) and body leakage are carried out as a function of temperature for transistors connected in the drain-on-top and drain-on-bottom configurations. Asymmetric leakage currents are seen when the source and drain terminals are interchanged, with the GIDL being higher in the drain-on-bottom configuration and the body leakage being higher in the drain-on-top configuration. Band-to-band tunneling is identified as the dominant leakage mechanism for both the GIDL and body leakage from electrical measurements at temperatures ranging from .50 to 200 .C. The asymmetric body leakage is explained by a differe
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