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Ключові слова:
МОН-транзистори, МОП- транзисторы, MOS- transistors
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Анотація:
A novel self-aligned fully silicided (FUSI) gate process for the integration of platinum monosilicide (PtSi) as a metal gate for pMOS applications is presented. It is shown that during Pt silicidation at elevated temperatures in oxygen ambient, a thin continuous SiO2 film grows along the Pt-silicide outer surface that effectively protects the FUSI structures during the selective metal wet etch. PtSi FUSI MOS capacitors were fabricated with the new process and electrically characterized.
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