|
-
Ключові слова:
комплементарна логіка на транзисторах метал-окид-напівпровідник, КМОН, комплементарная логика на транзисторах металл-оксид-полупроводник,КМОП, CMOS-technology ; Complementary Metal-Oxide Semiconductor, CMOS ; Metal-Oxide-Semiconductor Field Effect Transistor, MOSFET ; CMOS
-
Анотація:
Strained-silicon MOSFETs with both high breakdown voltage and low leakage current needed for RF/analog applications were investigated. Proper control of junction-depth profile and strained-silicon-layer thickness significantly improved transconductance, ON resistance, and leakage current. Breakdown voltage of strained-silicon MOSFETs was the same as silicon MOSFETs even at elevated temperatures. RF/analog performances, such as cutoff frequency and 1/f noise, were improved by this technology while keeping high-driving-voltage capability.
-
Електронні версії документа:
-
Є складовою частиною документа:
| 