|
Автор: Son Yong, Yang Kyung, Bae Byung, Jang Jin, Hong Munpyo, Kim Sung
-
Ключові слова:
транзистори, транзисторы, transistors ; Metal-Oxide-Semiconductor Field Effect Transistor, MOSFET
-
Анотація:
This brief reports the fabrication and characterization of a depletion-mode p-channel low-temperature polycrystalline silicon (poly-Si) thin-film transistor (TFT). The poly-Si channel was significantly doped by B ions to make a hole-accumulation layer at zero gate voltage. The depletion-mode poly-Si TFT is normally ON-state, so that the current can flow from the source to the drain at zero gate voltage. The TFT exhibited a field-effect mobility of 60 cm2/V · s, a threshold voltage of 18 V, an on/of current ratio of 106, and a gate voltage swing of 1.1 V/dec.
-
Електронні версії документа:
-
Є складовою частиною документа:
| 