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Автор: Suzuki K., Tanahashi K., Nagayama S., Magee C.W., Buyuklimanli T.H., Iwamoto E.
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Ключові слова:
кремній, кремний
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Анотація:
Boron was ion implanted into .. off-angle crystalline silicon substrates with a tilt angle of ... It is assumed that the B profiles along the ion-beam direction are identical, enabling the lateral straggling of B ion implanted with a tilt angle of 0. to be evaluated experimentally for the first time. Themeasurements show that the lateral straggling of channeling ions is small.
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