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Автор: CheonJ.H., Choi J.H., Hur J.H., JangJ., Shin H.S., Jeong J.K., Mo Y.G., Chung H.K.
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Ключові слова:
кремній, кремний
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Анотація:
This brief reports a flexible active-matrix organic light-emitting diode displaybased on a poly-Si thin-film transistor (TFT) backplane. The p-channel poly-Si TFTs on metal foil exhibited a maximum fieldeffect mobilityof 86.1 cm2/Vs, threshold voltage of 3.5 V, gate voltage swing of 0.8 V/dec, and the minimum off current of 10.12 A/мm at Vds = .0.1 V. A 4.1-in active-matrix backplane was fabricated with the poly-Si TFT with a conventional pixel circuit consisting of 2 TFTs and one capacitor. The scan driver circuits with PMOS were integrated on the flexible metal foil. The top emission, organic light emitting displayha ving a brightness of 100 cd/m2.
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