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Ключові слова:
транзистори, транзисторы, transistors
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Анотація:
Hydrogen degradation of III–V field-effect transistors (FETs) is a serious reliability concern. Previous work has shown that threshold-voltage shifts induced by H2 exposure in 1-mkm-channel InP high-electron mobility transitors (HEMTs) can be attributed to compressive stress in the gate due to the formation of TiHx in Ti/Pt/Au gates. The compressive stress affects the device characteristics through the piezoelectric effect. This paper examined the H2 sensitivity of 0.1-мm strained-channel InP HEMTs and GaAs pseudomorphic HEMTs. After exposure to H2, the threshold voltage VT of both types of devices shifted positive. This positive shift in VT is predicted by a model for hydrogen-induced piezoelectric effect. In situ VT measurements reveal distinct time dependences of the VT shifts, which are also consistent with stress-related phenomena.
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