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Автор: Chan C.T., Tang C.J., Wang T., Wang H.C.H., Tang D.D.
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Ключові слова:
комплементарна логіка на транзисторах метал-окид-напівпровідник, КМОН, комплементарная логика на транзисторах металл-оксид-полупроводник,КМОП, CMOS-technology ; Metal-Oxide-Semiconductor Field Effect Transistor, MOSFET ; Complementary Metal-Oxide Semiconductor, CMOS
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Анотація:
Drain current degradation in HfSiON gate dielectric nMOSFETs by positive gate bias and temperature stress is investigated by using a fast transient measurement technique. The degradation exhibits two stages, featuring a different degradation rate and stress temperature dependence. The first-stage degradation is attributed to the charging of preexisting high-k dielectric traps and has a log(t) dependence on stress time, whereas the second-stage degradation is mainly caused by new high-k trap creation. The high-k trap growth rate is characterized by two techniques, namely 1) a recovery transient technique and 2) a chargepumping technique. Finally, the effect of processing on high-k trap growth is evaluated.
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