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Ключові слова:
напівпровідникові пристрої, полупроводниковые устройства ; кремній, кремний ; моделювання, моделирование, modeling, simulation
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Анотація:
A three-dimensional numerical model is presented to simulate spherical p-n junction silicon solar cells, which is a promising new technology for photovoltaic (PV) energy conversion for terrestrial applications. Material properties imposed by the sphere formation method, geometry of the device, and the specific device structure stemming from the fabrication technology are taken into account in the optical and electrical models of the device. The spherical device is numerically simulated based on these models using finite-difference method in a spherical system of coordinates, generating the internal quantum efficiency and current–voltage (I–V ) characteristics of the device. It has been shown that the efficiency of a spherical solar cell is slightly lower than a conventional device; however, the slightly inferior performance does not outweigh the cost advantage. It has been also found that subsurface diffusion length from effective impurity segregation and the depth of the denuded zone in spherical d
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Теми документа
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УДК // Фотогальванічні елементи, сонячні елементи або сонячні батареї (панелі)
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