Опис документа

A study on using a novel metal gate—the Ni fully GermanoSilicide (FUGESI)—in pMOSFETs is presented. Using HfSiON high-. gate dielectrics and comparing to Ni fully Silicide (FUSI) devices, this paper demonstrates that the addition of Ge in poly-Si gate (with Ge/(Si + Ge) . 50%) results in: 1) an increase of the effective work function by . 210 mV due to Fermi-level unpinning effect; 2) an improved channel interface; 3) a reduced gate leakage; and 4) the superior negative bias temperature instability characteristics. Low-frequency noise measurement reveals a decreased 1/f and generation-recombination noise in FUGESI devices compared to FUSI devices, which is attributed to the reduced oxygen vacancies (Vo)-related defects in the HfSiON dielectrics in FUGESI devices. The reduced Vo-related defects stemming from Ge at FUGESI /HfSiON interface are correlated with the Fermi-level unpinning effect and the improved electrical characteristics observed in FUGESI devices.