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Ключові слова:
аналітичні моделі, аналитические модели ; гетероструктури, гетероструктуры ; Metal-Oxide-Semiconductor Field Effect Transistor, MOSFET
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Анотація:
An analytical model of drain current of Si/SiGe heterostructure p-channel MOSFETs is presented. A simple polynomial approximation is used to model the sheet carrier concentration (pHs ) in the two-dimensional hole gas at the Si/SiGe interface. The interdependence of pH s and the hole concentration at the Si/SiO2 interface (pS s ) is taken into account in the model, which considers current flow at both the Si/SiGe and the Si/SiO2 interfaces. This model is applicable to compressively strained SiGe buried-channel heterostructure PMOSFETs as well as tensilestrained surface-channel PMOSFETs. The model has been implemented in SABER, a circuit simulator. The results from the model show an excellent agreement with the experimental data.
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