A novel dual-metal gate technology that uses a combination of Mo.MoSix gate electrodes is proposed. An amorphous-Si/Mo stack was fabricated as a gate electrode for the n-channel device. It was thermally annealed to form MoSix. Pure Mo served as the gate electrode for the p-channel device. The work functions of MoSix and pure Mo gates on SiO2 are 4.38 and 4.94 eV, respectively, which are appropriate for devices with advanced transistor structures. The small increase in the work function (< 20 meV) and the negligible equivalent oxide thickness variation (< 0.08 nm) after rapid thermal annealing at 950 .C for 30 s also demonstrate the excellent thermal stabilities of Mo and MoSix on SiO2. Additional arsenic ion implantation prior to silicidation was demonstrated further to lower the work function of MoSix to 4.07 eV. This approach for modulating the work function makes the proposed combination of Mo.MoSix gate electrodes appropriate for conventional bulk devices. The developed dual-metal-gate technolo
