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Автор: Bunak S.V., Ilchenko V.V., Melnik V.P., Hatsevych I.M., Romanyuk B.N., Shkavro A.G., Tretyak O.V.
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Ключові слова:
молекулярна фізика, молекулярная физика ; провідність, проводимость
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Анотація:
The theoretical and experimental investigations of electrical properties of the Al-SiO2--SiO(ncsSi-2-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally found that the Al-SiO2-()ncsSi--SiO2-Si structures with the tunnel dielectric layer revealed the effect of dynamic memory. Electric properties and parameters of the interface states located between and SiOncsSi-2 were studied in detail by measuring of current-voltage, capacitance-voltage, and thermally stimulated current characteristics.
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Є складовою частиною документа:
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Теми документа
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Окремі фонди та колекції КНУ // праці авторів КНУТШ, труды авторов КНУТШ, работы авторов КНУТШ
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