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Автор: Neimash V.B., Poroshin V.M., Shepeliavyi P.Ye., Yukhymchuk V.O., Melnyk V.V., Makara V.A., Kuzmich A.G.
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Ключові слова:
комбінаційне розсіювання світла, комбинационное рассеяние света ; кристалізація, кристаллизация ; тонкі плівки, тонкие пленки, thin films
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Анотація:
The influence of tin impurity on amorphous silicon crystallization was investigated using the methods of Raman scattering, Auger spectroscopy at ion etching, scanning electron microscopy and X-ray fluorescence microanalysis in thin films of Si:Sn alloy manufactured by thermal evaporation. Formation of Si crystals of the 2 to 4nm size has been found in the amorphous matrix alloy formed at the temperature 300 °С. Total volume of nanocrystals correlates with the content of tin and can comprise as much as 80% of the film. The effect of tin-induced crystallization of amorphous silicon occurred only if there are clusters of metallic tin in the amorphous matrix. The mechanism of tin-induced crystallization of silicon that has been proposed takes into accountthe processes in eutectic layer at the interface metal tin - amorphous silicon.
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Є складовою частиною документа:
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Теми документа
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Окремі фонди та колекції КНУ // праці авторів КНУТШ, труды авторов КНУТШ, работы авторов КНУТШ
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