Опис документа

Calculation of the surface characteristics and pressures of InAs quantum dots in a GaAs matrix [Текст] / S.K. Guba, V.N. Yuzevich // Semiconductors. — 2008. — № 7. — P. 905-910.
Defect structure of CdxHg1 - xTe films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment [Текст] / I.I. Izhnin, A.I. Izhnin, E.I. Fitsych та ін. // Semiconductors. — 2008. — № 7. — P. 1413-1415.
Deposiion of thin Bi2Te3 and Sb2Te3 films by pulsed laser ablation [Текст] / I.S. Virt, T.P. Sckumbatiuk, I.V. Kurilo та ін. // Semiconductors. — 2008. — № 7. — P. 544-549.
Effect of accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor n-ZrNiSn [Текст] / Romaka V. A., Rogl P., Romaka V. V., Stadnyk Yu. V., Hlil E. K., Krajovskii V. Ya., Horyn A. M. // Semiconductors. — 2008. — № 7. — P. 892-898.
Electrical and optical properties of CdHgTe films grown by molecular-beam expitaxy on silicon substrates [Текст] / I.I. Iznin, K.D. Mynbaev, M.V. Yakushev та ін. // Semiconductors. — 2008. — № 7. — P. 1341-1345.
Features of band structure and conductions mechanisms of n-HfNiSn semiconductor, heavy doped with Ru [Текст] / V. A. Romaka , P. Rogl, V. V. Romaka, Yu. V. Stadnyk, R. O. Korzh, V. Ya. Krayovskyy, A. M. Horyn // Semiconductors. — 2008. — № 7. — P. 1545-1551.
Features of conduction mechanisms in n-ZrNiSn semiconductor heavily doped with a Rh acceptor impurity [Текст] / Romaka V. A., Rogl P., Stadnyk Yu. V., Romaka V. V., Hlil E. K., Krajovskii V. Ya., Horyn A. M. // Semiconductors. — 2008. — № 7. — P. 1145-1152.
Features of conductivity of the intermetallic semiconductor n-ZrNiSn heavily doped with a Bi donor impurity [Текст] / V. A. Romaka, P. Rogl, Yu. V. Stadnyk, E. K. Hlil, V. V. Romaka, A. M. Goryn // Semiconductors. — 2008. — № 7. — P. 887-893.
Features of structural, electron-transport, and magnetic properties of heavily doped n-ZrNiSn semiconductor: Fe acceptor impurity [Текст] / V.A. Romaka, Yu.V. Stadnyk, D. Fruchart та ін. // Semiconductors. — 2008. — № 7. — P. 278-284.
Features of the conduction mechanisms of the n-HfNiSn semiconductor heavily doped with the Co acceptor impurity [Текст] / V. A. Romaka, P. Rogl, Yu. V. Stadnyk, V. V. Romaka, E. K. Hlil, V. Ya. Krayovskyy, A. M. Horyn // Semiconductors. — 2008. — № 7. — P. 1106-1113.
Features of the mechanisms of generation and "Healing" of structural defects inthe healivy doped intermetallic semiconductor n-ZrNiSN [Текст] / V.A. Romaka, E.K. Hlil, Ya.V. Skolozdra та ін. // Semiconductors. — 2008. — № 7. — P. 1115-1123.
Features of the structural, electrokinetic, and magnetic properties of the heavily doped ZrNiSn semiconductor: Dy acceptor impurity [Текст] / V.A. Romaka, D. Fruchart, V.V. Romaka та ін. // Semiconductors. — 2008. — № 7. — P. 7-13.
Mechanism of local amorphization of a heavily doped Ti1-xVxCoSb intermetallic semiconductor [Текст] / V.A. Romaka, Yu.V. Stadnyk, L.G. Akselrud та ін. // Semiconductors. — 2008. — № 7. — P. 753-760.
Morphology, elemental composition, and mechanical properties, of polycrystalline CdTe layers [Текст] / I.V. Kurilo, H.A. Ilchuk, S.V. Lukashuk та ін. // Semiconductors. — 2008. — № 7. — P. 1531-1537.
Photoprocesses in a semiconducting carbon photocapacitor with a double electrical layer [Текст] / F.O. Ivashchyshyn, I.I. Grygorchak, B.P. Bakhmatyuk // Semiconductors. — 2008. — № 7. — P. 835-840.
Positronics of radiation-induced effects in chalcogenide glassy semiconductors [Текст] / O. Shpotyuk, S.A. Kozyukhin, M. Shpotyuk та ін. // Semiconductors. — 2008. — № 7. — P. 298–304.
The mechanism of generation of the donor- and acceptor-type defects in the n-TiNiSn semiconductor heavily doped with Co impurity [Текст] / V.A. Romaka, Yu.V. Stadnyk, D. Fruchart та ін. // Semiconductors. — 2008. — № 7. — P. 1124-1130.